The conference program starts at 9am on Friday, January 8 and ends at 12:00pm on Sunday, January 10.

Invited Speakers:
D. Basov (UCSD)
L. Chua (UC Berkeley)
M. DiVentra (UCSD)
A. Ignatiev (Houston, US)
I. Inoue (Tsukuba, Japan)
P. Littlewood (Cambridge, UK)
S. Parkin (IBM, US)
M. Rozenberg (Buenos Aires, Argentina, & Orsay, France)
Y. Shin (POSTECH, Korea)
R. Waser (Aachen/Julich, Germany)
S. Williams (Hewlett Packard, US)

 

 

Workshop Program

 

Friday Jan 8, 2010

8:55 – 9:00           Opening remarks and orientation (D. Cox for ICAM, O. Heinonen and G. Zimanyi)

9:00 – 9:45           Stanley Williams (Hewlett-Packard): Making and Measuring Memristors

9:45 – 10:30         Leon Chua (UC Berkeley):  Resistive Switching Implies Memristor

10:30 – 11:00      Coffee break

11:00 – 11:45      Blanka Magyari-Kope (Stanford University): The electronic structure of conductive channels mediated by oxygen vacancies in transition metal oxides

11:45 – 12:30      Max Di Ventra (UC San Diego): Memory circuit elements: from spintronics to amoeba’s learning 

12:30 – 13:30      Lunch

13:30 – 14:15      Interaction time

14:15 – 15:00      Stuart S.P. Parkin (IBM Almaden): TBA

15:00 – 15:15      Break

15:15 – 15:30      R. Dittman (Juelich): Coexistence of two different resistive switching polarities
in titanate thin film heterostructures

15:30 – 15:45     S.B. Lee (Seoul,Korea): Forming dynamics of conducting filaments in unipolar resistive switching

15:45 – 16:00     A. Geresdi (Budapest Hungary): Resistive switching realized in point contact geometry

16:00 – 16:15    O. Heinonen (Seagate): Coupled order parameter model for resistive switching

Saturday Jan. 9, 2010

9:00 – 9:45           M. Rozenberg (Universite de Paris – Sud):  The mechanism of bipolar resistive switching in transition metal oxides 

9:45 – 10:30         T.W. Noh (Seoul National University): A unified model to explain both unipolar and bipolar resistive switchings 

10:30 – 11:00      Break

11:00 – 11:45      D. Basov (UC San Diego): Memory effects in vanadium dioxide

11:45 – 12:30      Y. Shin (Ulsan University, Korea): Understanding dynamic responses of smart materials using computational approaches

12:30 – 13:30      Lunch

13:30 – 14:15      Interaction time

14:15 – 15:00      P. Littlewood (Cambridge University, UK): Inhomogeneous structures in correlated condensed matter

15:00 – 15:15      Break

15:15 – 15:30      F. Miao (Hewlett-Packard): Switching and retention characterization of low current TiOx memristive devices

15:30 – 15:45    J.P. Strachan (Hewlett-Packard): Peering inside a functioning memristive device

15:45 – 16:00   H.B. Lee (Stanford): The impact of hydrogen on the forming reproducibility of reactively sputtered PrCaMnO thin films

16:15 – 18:00      Poster session

18:30 – 20:00      Conference Dinner

 

Sunday Jan. 10, 2010

9:00 – 9:45           A. Ignatiev (University of Houston): RRAM: Mechanisms and Materials for their application

9:45 – 10:30         I. Inoue (AIST, Japan): Classification and Key Features of Resistance Switchings

10:30 – 11:00      Break

11:00 – 11:45      R. Waser (Aachen/Juelich, Germany):  Redox-Based Switching – in the Concert of Resistive RAM Phenomena

11:45 – 12:00      Closing remarks (G. Zimanyi)